2005 IRW NBTI Discussion Group

Abstract

        

The negative bias temperature instability (NBTI) has become one of the major reliability problems in modern pMOSFETs. Despite being reported almost 40 years ago, a complete understanding of the NBTI phenomenon has proved elusive.

        
        

The purpose of this discussion group is to openly discuss the current underlying theories of NBTI and any observable details that may or may not support our current understanding of this reliability issue.

        
    

NOTE:  If you plan on attending, please download the questionnaire, complete it, and return to ynelson@qualcomm.com by 10/10/05.  Thank you for helping to improve the efficiency of the IRW discussion groups.

Questionnaire (as a WORD document) (as html)

NBTI DISCUSSION GROUP SURVEY

Name (optional):

Company (optional):

Please rank the topics below in order of importance to you and your organization.

(1 = not important, 2 = neutral, 3 = very important)

Topics

Rating

Vt Power-law time slope discrepancies

1

2

3

NBTI recovery and frequency dependence

1

2

3

Impact of nitridation

1

2

3

Models for NBTI: charge trapping, fixed charge creation, interface states

1

2

3

What are the precursors/defects?

1

2

3

New aspects of NBTI that were presented at the 2005 IRW.

1

2

3

Back end processes that affect NBTI

1

2

3

NBTI relationship with Hot Carrier (HC) and Time-Dependent Dielectric Breakdown (TDDB) instabilities

1

2

3

NBTI kinetics: time, temperature and field dependencies

1

2

3

How to meaningfully measure NBTI: choice of device, parameter, and lifetime criterion

1

2

3