Gate Oxide / High-k Reliability Discussion Group Questionnaire
Technologies
o 45 nm node
o In a later technology node
o Never, high–k is just an academic exercise.
o 45 nm node
o In a later technology node
o Never, metal gate is just an academic exercise.
SiO2/SiON
II. Which degradation models dominate the SiO2/SiON breakdown?
o Anode hole injection
o Hydrogen Release
o Multi-vibrational hydrogen release
o Carrier energy
o Oxide field
III. Do you use lifetime extension for TDDB (oxide below 14Å)?
o Yes
o No
a. Which methodology do you use?
o Power consumption Max
o X breakdown on a same transistors
o X breakdown on the circuits
o Shift of transistors characteristics (Vt, Ion, Ioff,…)
o Others
Metal Gate
IV Do you think that, with metal gate, the oxide breakdown still allows the lifetime extension?
o Yes
o No
V Do you think that the oxide breakdown with metal gate represents a metal gate integration showstopper?
o Yes
o No
VI. Are the degradation models known from Poly/SiO2 applicable to Metal/SiO2?
o Yes, which physical models are valid? (check all that apply)
o Anode hole injection
o Hydrogen release
o Multi-vibrational hydrogen release
o Carrier energy
o Oxide field
VII. What voltage acceleration for TDDB is applicable with metal gate?
o exp(1/V)
o exp (a V)
o Vn (power law)
o Some other dependence
VIII. What is the most critical challenge for the reliability assessment of MOS devices with metal gate? (check all that apply)
o Methodology
o Dielectric breakdown (Soft versus hard)
o Stress Induced Leakage Current (SILC)
o Charge trapping
o NBTI PBTI
o Noise (1/f, …)
o Defect density
o Others …………………………
High-K dielectrics
IX. Is the reliability methodology of conventional SiO2 / SiON based gate dielectrics applicable to high-k gate dielectrics?
o Yes
o No
What improvements / adjustments are required?
X. Are the degradation models known from SiO2 applicable to high-k gate dielectrics?
o Yes, which physical models are valid? (check all that apply)
o Anode hole injection
o Hydrogen release
o Multi-vibrational hydrogen release
o Carrier energy
o Oxide field
XI. What voltage acceleration for TDDB is applicable with metal gate?
o exp(b/V)
o exp(aV)
o Vn (power law)
o Some other dependence
XII. What is the most critical challenge for the reliability assessment of MOS devices with high-k gate dielectrics? (check all that apply)
o Methodology
o Dielectric breakdown (Soft versus hard)
o Stress Induced Leakage Current (SILC)
o Charge trapping
o NBTI PBTI
o Noise (1/f, …)
o Defect density
o Others …………………………