Identification & characterization of reliability effects:

• failure mechanisms in new materials and device structures,
• reliability aspects of:
  • high-k gate stack,
  • Cu interconnects and low-k dielectrics,
  • MOS and bipolar transistors including FinFETs and 3D gates,
  • SiGe and strained Si,
  • SOI,
  • MEMS devices / mechanical stress related reliability effects,
  • opto-electronics,
  • high voltage devices,
  • precision resistors,
  • photovoltaics,
• unique reliability phenomena and failure mechanisms in
  • Non-Volatile memories,
  • phase-change-memory,
  • MRAM,
  • fuse and anti-fuse and
  • other novel memory technologies,
• reliability aspects of organic electronics materials and devices,
• reliability assessment of nano-materials and technologies.