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International Integrated Reliability Workshop

The IEEE International Integrated Reliability Workshop (IIRW) originated from the Wafer Level Reliability Workshop in 1982. The IIRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems.

Tutorials, paper presentations, poster sessions, moderated discussion groups, special interest groups, and the informal format of the technical program provide a unique environment for understanding, developing, and sharing reliability technology and test methodologies for present and future semiconductor applications as well as ample opportunity for open discussions and interactions with colleagues.

Hot reliability topics for the workshop include: SiGe and strained Si, III-V, SOI, high-k and nitrided SiO2 gate dielectrics, reliability assessment of novel devices, organic electronics, emerging memory technologies (RRAM etc.) and future "nano"-technologies, NEMS/MEMS, photovoltaics, transistor reliability including hot carriers and NBTI/PBTI, Cu interconnects and low-k dielectrics, product reliability and burn-in strategy, impact of transistor degradation on circuit reliability, reliability modeling and simulation, optoelectronics, single event upsets, as well as the traditional topics of wafer level reliability (WLR) and built-in reliability (BIR).



IIRW 2018 new features


The Inaugural Reliability Experts Forum 2018new 


More than forty world-renown reliability experts are invited to share their views and discuss the three main transistor reliability mechanisms -- TDDB, BTI, HC degradation. More information is found here


 Best student paper awardnew


Student papers, presented by students and based on their research work will be considered for Best student paper award. Click here for more information




 The top 5 papers will be published in IEEE Transaction on Device and Material Reliability (TDMR)


The technical program committee will select the best five papers for publication in a special issue of IEEE Transaction on Device and Material Reliability (TDMR). Click here for more information



Zakariae Chbili

General Chair

Stanislav Tyaginov

Technical Program Chair

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