Fallen Leaf Lake

Tutorial Program

Jason T. Ryan

National Institute of Standards and Technology

Electron Paramagnetic Resonance: What on Earth are you Talking About?

Electron paramagnetic resonance (EPR), also commonly called electron spin resonance (ESR), is an extremely powerful analytical technique that is seemingly ubiquitous in the sciences. A simple search of EPR related literature from last year (2016) returns roughly 2600 publications spanning across almost 100 extremely diverse subject areas covering everything from evolutionary biology to fuel science and physiology to astrophysics.


Perhaps more pertinent for this conference, EPR spectroscopy is one of the most invaluable tools available for gaining physical insight into the identity and role that atomic-scale defects play in determining the performance and reliability of solid-state devices. However, the measurement can seem intimidating or confusing to many in our community and, as a result, is often overlooked as a tool that can help.


The goal of this tutorial is to show you, the intimidated or confused, that it doesn’t have to be that way.


After a brief history and background, I will show you that the measurement itself is relatively simple to explain and is in my opinion, a rather elegant combination of some very basic physics principles. Included in this will be some instrumentation/hardware information and other experimental notes particularly relevant for studying solid-state devices and materials. Historical examples will be discussed along with the use of EPR to solve more modern challenges. Various common embodiments of EPR (conventional, electrically-detected, non-resonant, etc.) will be explained along with their pros and cons.


By the end, you will have a basic understanding of EPR spectroscopy and will be much better equipped to read and interpret the solid-state EPR literature. Additionally, I’m most hopeful that I can entice you to actively seek out EPR obtained information to help solve your own material and device challenges (or perhaps initiate your own unique studies). Whatever the case may be, I think it will be enjoyable and of interest to all.


Dr. Ryan is a member of the technical staff and leader of the Magnetic Resonance Spectroscopy and Device Metrology Project in the Engineering Physics Division of the Physical Measurement Laboratory at the National Institute of Standards and Technology (NIST). He received the B.S. degree in Physics from Millersville University, Millersville, PA in 2004. He received the M.S. degree in Engineering Science and the Ph.D. in Materials Science and Engineering from The Pennsylvania State University, University Park, PA in 2006 and 2010, respectively. In 2010, he was awarded a National Research Council post-doctoral fellowship which he spent in the Engineering Physics Division at NIST where he is currently employed as a staff member. He has been involved in the technical and managerial committees of both the IEEE IRPS and IEEE IIRW conferences, serving as IIRW General Chair in 2015.

Scott Pozder


An Overview of Chip to Package Interaction and its Impact on Reliability

In the early 2000’s CPI became a major reliability topic because of the susceptibility for low-k and ultra-low-k dielectric BEOL materials to fail during chip attach to package. Now with over a decade of interconnect and package material improvements CPI remains a reliability challenge. This is due to many factors beyond the continued use of low k films as interconnect dielectric material. A few of the factors are the wide range of chip and package sizes, consequences of increasing functionality, and decreasing bump diameters to enable higher IO counts. These and other aspects of CPI and its impact on reliability will be covered in this tutorial.

Scott Pozder is a Member of Technical Staff at GlobalFoundries focusing on the measurement and prediction of CPI reliability in 7 and 14nm technologies. He is an author or coauthor on over 14 publications in the areas of 3D IC, Advanced Packaging and Cu BEOL and has 19 Issued U.S. Patents.

Ted Moise

Texas Instruments

Embedded Ferroelectric Memory – Operation, Reliability, and Applications

Ferroelectric Random-Access Memory (FRAM) features low-voltage (1.5V), fast-write operation (55ns), non-volatile data storage, and ultra-low energy usage. FRAM has applications both as a standalone memory and as an embedded memory with a microcontroller. As a result of their low energy usage, FRAM-based microcontrollers enable extended (10-year) battery-life electronics or even battery-free (i.e. energy harvesting) operation. Further, FRAM’s fast-write, high-endurance characteristics are well suited for applications that require frequent data logging or code updates. Since achieving FRAM production on the 130nm node in 2007, Texas Instruments (TI) and its partners have qualified and released hundreds of products ranging from 16kbit standalone memories to multi-Mb micro-controllers and implantable medical devices.


In this tutorial, the operation of ferroelectric-based memory cells and their integration into production analog CMOS processes will be summarized. Data demonstrating FRAM’s nearly-infinite (>1x1015cycles) endurance properties and high-temperature (10yr@125ºC) data retention properties will be reviewed. The primary FRAM-related reliability failure mechanisms, thermal depolarization and data imprint, will be described along with techniques to minimize the risk of failures on products. Following the reliability discussion, an overview of the applications for fast-write non-volatile memory will be presented.


Ted Moise earned B.S. degrees in Physics and Engineering from Trinity College, Hartford, CT, in 1987. He earned a Ph.D. degree in electrical engineering from Yale University, New Haven, CT, in 1992. Ted joined Texas Instruments in 1992, where he was responsible for the development of high-performance quantum-effect devices and circuits. In 1997, he started work on the development of scaled ferroelectric capacitors leading to the first demonstration of low-voltage, high-density, embedded ferroelectric random-access memory (FRAM). To date, Texas Instruments has shipped more than 500 million FRAM devices with applications ranging from ultra-low power medical devices to automotive event data recorders. Ted is an emeritus distinguished member of TI’s technical staff and is currently the Signal Chain Roadmap manager within TI’s Analog Technology Development organization. Ted has authored or co-authored over 70 papers, served as conference and session chair for several international technical conferences, presented numerous invited lectures, and holds 50 issued patents. Ted’s work was honored with the 2012 Edith and Peter O’Donnell Innovation Award from The Academy of Medicine, Engineering & Science of Texas (TAMEST).

Martin Anselm

Rochester Institute of Technology

Integrated Photonics Packaging Reliability – Assessing Packaging Strategies and Reliability Testing: Evaluating current passive fiber alignment packaging trends and how to test them

This tutorial will provide an overview of manufacturing processes used in Photonics Integration Packaging. To date, many packaging strategies for photonics and electronics integration are not standardized in the industry since this is a new developing technology. This presents a significant challenge for predicting the reliability of future products. This tutorial discusses the challenge of reliability assessment of photonic and electronic integrated devices in the context of the packaging processes and materials proposed for future designs.

Dr. Martin Anselm is an Assistant Professor and the director of the Center for Electronics Manufacturing and Assembly at the Rochester Institute of Technology (RIT). Prior to joining RIT Martin lead a multi-million dollar industry funded research consortium at Universal Instruments called the AREA Consortium. This group conducted applied research in the areas of reliability, materials and process development for the surface mount electronics manufacturing industry. Prior to that Martin was the lead Engineer in a Failure Analysis services group that conducted root cause failure determinations and corrective action services for the electronics manufacturing industry.

Vikram Dalal

Iowa State University

The Reliability of Thin Film Photovoltaic Devices and Emerging PV Materials

Thin film PV materials and devices are of importance for building-integrated semitransparent solar cells and as top cells in a tandem cell arrangement to increase the efficiency of c-Si. They are also used in their own right as solar cell materials for the widely deployed CdTe and (Copper,Indium) Selenide modules. In this talk I will address various thin film PV material and device technologies from the viewpoint of the fundamental reliability of the materials and devices. The stability of a new class of materials (perovskites) will also be discussed. It will be shown that the stability of both the fundamental materials, and of the entire device structure, including contacts, is important so as to assure long life (30 years) with minimal degradation (<10%).

Dr. Vikram Dalal, Thomas Whitney Professor and Anson Marston Distinguished Professor of Electrical and Computer Engineering Department at Iowa State, received his B.E.(Elec.Engr.) degree from University of Bombay, India in 1964 and his Ph.D. in EE from Princeton in 1969. He has an extensive research record in worked in both industry and academia, and has been at Iowa State since 1988. He has graduated 25 Ph.D. students and over 30 M.S. students. His primary research interests are in photovoltaic energy conversion materials and devices and semiconductor processing. He has published ~160 papers and is a fellow of IEEE, American Physical Society and AAAS. He has been Director of MRC since 1999.

Alexander Shluger

University College London

Atomistic Calculations for Material and Device Reliability

I will present a detailed account of theoretical methods and models used for multiscale modelling of reliability of CMOS devices, atomistic mechanisms of breakdown of gate dielectrics and resistance switching of oxides for RRAM and neuromorphic computing. Emphasis will be made on comparing the electrical properties of polycrystalline and amorphous oxide films. I will link the prediction of defect properties with the calculations of electron transfer rates and will discuss the effect of bias application on defect mobility and reactions.

Alexander Shluger graduated from the Latvia State University, Riga, USSR in 1976. He received Ph.D. and Doctor of Science degrees from the L. Karpov Physics and Chemistry Research Institute, Moscow in 1981 and 1988, respectively. He joined the Royal Institution of Great Britain, London in 1991 and the faculty of the University College London in 1996, where he is a Professor of Physics from 2004. He is a Fellow of the Institute of Physics and of the American Physical Society, and a Foreign Member of the Latvian Academy of Sciences. He is a Principal Investigator at the WPI-Advanced Institute of Materials Research, Tohoku University, Japan (from 2007). His current research is focused on theoretical studies of defects in oxides and at semiconductor/oxide interfaces in conjunction with microelectronics applications, the mechanisms of photo-induced processes at oxide surfaces, as well as on modelling of imaging of insulating surfaces using Atomic Force Microscopy.