ON Semiconductor, Belgium
On-state gate stress induced threshold voltage instabilities in p-GaN gate AlGaN/GaN HEMTs
Biography: Arno Stockman received the MSc degree (summa cum laude) in engineering physics in 2016 and the PhD degree in engineering physics in 2020 from Ghent University, Ghent, Belgium. In 2016, he obtained a Baekeland Scholarship from Flanders Innovation and Entrepreneurship (VLAIO) to fund his PhD research on the impact of trap dynamics on the reliability of GaN-on-Si power devices in cooperation with Ghent University and ON Semiconductor Belgium, Oudenaarde, Belgium. Since 2020, he is working at ON Semiconductor Belgium as a GaN and SiC device engineer.
Samsung Electronics, South Korea
FEOL self-heating and BEOL Joule-heating effects of FinFET technology and its implications for reliability prediction
Biography: Hai Jiang studied Microelectronics and Solid-State Electronics at Peking University, where he received his PhD degree in 2017. He was also a visiting scholar in school of electrical and computer engineering at Purdue University-West Lafayette from 2015 to 2016. Now, he is a staff engineer of Samsung Electronics Foundry Business, Republic of Korea. His present interests focus on the reliability of advanced transistor: HCI, BTI, TDDB, Self-heating etc.
Daniel J. Lichtenwalner
Wolfspeed, United States
Accelerated Testing of SiC Power Devices
Biography: Daniel J. Lichtenwalner received his PhD degree in Materials Science from the Massachusetts Institute of Technology in 1990, under David A. Rudman and Alfredo C. Anderson, in thin film processing and characterization of superconducting nitride materials. During the 1990’s and from 2002-2012 he was a post-doctoral researcher and later a Research Professor working with Prof. Angus I. Kingon in the Materials Science and Engineering Department at NCSU in Raleigh, NC. His work focused on thin film processing and characterization of oxides and dielectrics having novel superconducting, piezoelectric, and dielectric properties. A major portion of his research focused on high-K dielectrics such as Lanthanum silicates and La-doped hafnium-silicon oxynitrides for advanced CMOS devices on Si. Since 2012 he has been a Research Scientist at Wolfspeed, Inc (a Cree company) in the SiC power devices R&D group. Here his research focuses on silicon carbide MOSFET processing and characterization, particularly focused on gate oxide processing and long-term device reliability. He has presented multiple invited papers at conferences, for example at the Electrochemical Society Annual Meeting (2007), the Materials Research Society Fall meeting (2015), the International Conf. on SiC and Related Materials (2015), and the International Integrated Reliability Workshop (2018). He has over 25 years of experience working with thin film processing, and materials and device characterization. He also spent one year as a Visiting Professor in the Chemistry Department at Florida International University in Miami, FL, and has teaching experience at NCSU. He has authored/coauthored more than 100 papers, including 2 book chapters and 11 patents.
Infineon Technologies AG, Germany
Plasma induced charging damage: From appropriate MOS test structures to antenna design rules, a comprehensive process qualification procedure
Biography: Andreas Martin received his M.Eng.Sc. in Electrical and Electronic Engineering from the Technical University of Darmstadt, Germany, in 1992. After six years in the silicon technology characterization group of the research center “Tyndall Institute” (former NMRC), Cork, Ireland he started working for the central Reliability Methodology department of Infineon Technologies AG in Munich, Germany in the field of fWLR Monitoring. He is involved the design of advanced and novel test structures, development of new stress methods and data analysis techniques on the topics of: dielectrics, plasma induced damage, metallization and device degradation topics for a wide range of processing nodes. He is responsible for the PID process qualification and plasma charging design manual rules at Infineon. He has published and co-authored numerous papers/presentations, given tutorials and invited talks at various conferences and served in committees of the IEEE IRW, IEEE IRPS, ESREF and of the “Workshop on Dielectrics in Microelectronics” (WoDiM) for many years. He has published several patents and has reviewed technical papers for different journals. He is a senior member of the IEEE, Infineon´s alternate of the JEDEC subcommittee 14.2, member of the IEC WLR-work group TC 47 and co-chair of the German ITG-group 8.5.6 on “WLR and reliability simulations”. His recent JEDEC activities incorporate the moderation of two JEDEC 14.2 working groups: “Guideline on fWLR Monitoring”, and “Standard on reliability stress characterization of plasma induced damage”.