The IEEE International Integrated Reliability Workshop (IIRW) originated from the Wafer Level Reliability Workshop in 1982. The IIRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems.
Tutorials, paper presentations, poster sessions, moderated discussion groups, special interest groups, and the informal format of the technical program provide a unique environment for understanding, developing, and sharing reliability technology and test methodologies for present and future semiconductor applications as well as ample opportunity for open discussions and interactions with colleagues.
IIRW 2025 Best student paper
"Bias temperature instability in 22nm FDSOI transistors at cryogenic temperatures," - Chinmay Dimri, KU Leuven
IIRW 2026 date announced! 4-8 October 2026
Regular Abstract Deadline:
June 14, 2026
Author Notification:
July 26, 2026
Early Registration Deadline:
TBD
Late News Deadline:
September 13, 2026
General Chair:
Jean Yang-Scharlotta
Technical Program Chair:
Michael Waltl
IIRW 2026 welcomes abstracts on, but not limited to, these topics:
Special Focus Areas:
Power Electronic Reliability (SiC, GaN, PMICs)
Circuit and Systems Reliability (telemetry, SoC)
Heterogeneous Integration/3DIC (TSV and stacking package)
Device-Level Reliability
FET, FinFET, SOI, III-V, SiGe reliability (HCI, BTI, TDDB, RTN, etc.)
FEOL/MOL/BEOL dielectrics (high-k, SiO2, SiON, low-k)
RF and mm/sub-mm Wave devices and circuits reliability
Reliability Characterization & Testing
Wafer-level reliability tests for monitoring and qualification
Plasma-induced damage (PID), electrostatic discharge (ESD), Failure analysis
Modeling and simulation for reliability, including self-heating
Process integration and advanced packaging reliability
Circuit, System, and Application-Level Reliability
Design-in-reliability (products, circuits, systems, processes)
Reliability of advanced automotive circuits, systems, products
Customer/manufacturer product reliability requirements
Memory Reliability
Conventional and emerging memories: Flash, DRAM, SRAM
Emerging non-volatile memories: RRAM, PCM, FeFETs, ferroelectric capacitors
Reliability and physics of memory switching, cycling endurance, retention, and variability
Memory-centric aging mechanisms and failure modes
Reliability in memory-based computing architecture