8-12 October 2023
Stanford Sierra Conference Center
Fallen Leaf Lake, CA, USA
REGISTRATION IS NOW OPEN!
Welcome to IIRW
The IEEE International Integrated Reliability Workshop (IIRW) originated from the Wafer Level Reliability Workshop in 1982. The IIRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems.
Tutorials, paper presentations, poster sessions, moderated discussion groups, special interest groups, and the informal format of the technical program provide a unique environment for understanding, developing, and sharing reliability technology and test methodologies for present and future semiconductor applications as well as ample opportunity for open discussions and interactions with colleagues.
IIRW 2022 Best student paper
"Exploring Process-Voltage-Temperature Variations Impact on 4T1R Multiplexers for Energy-aware Resistive RAM-based FPGAs" by Tommaso Rizzi, IHP Microelectronics GmbH
Important Dates
Regular Abstract Deadline: August 5, 2023
Author Notification: August 30, 2023
Late News Deadline: September 10, 2023
Contacts
General Chair: Francesco Maria Puglisi gc.iirw@gmail.com
Technical Program Chair: Charles LaRow tpc.iirw@gmail.com
News
Reliability Experts Forum panels announced:
Vmax and technology scaling
Hot Carrier Degradation
Panelists recruited among top leaders in the industry and academia will be announced soon in new dedicated page on this website
Papers submission site will open soon
Registration is now open!
Regular submission closed!
Late news submission is closed!
Call For Papers
IIRW2023-CfP-2nd_v01.docx.pdfScope
IIRW 2023 welcomes abstracts on, but not limited to, these topics:
FOCUS AREA: Circuit reliability, device-circuit degradation, aging
FOCUS AREA: Advanced node scaling solutions (FEOL/MOL/BEOL)
FOCUS AREA: Machine learning for reliability
FOCUS AREA: Multi-die chip Packaging
In-memory computing and neuromorphic reliability
Plasma-induced damage (PID), electrostatic discharge (ESD), Failure analysis
FEOL/MOL/BEOL dielectrics (high-k, SiO2, SiON, low-k)
FET, FinFET, SOI, III-V, SiGe reliability (HCI, BTI, TDDB, RTN, etc.)
Conventional and emerging memories (Flash, RRAM, Ferroelectrics, etc.)
Emerging technologies and devices (2D materials, IGZO, etc.)
Power, wide-bandgap (SiC, GaN, etc.) devices and circuits reliability
RF and mm/sub-mm Wave devices and circuits reliability
Modeling and simulation for reliability, including self-heating
Process integration and advanced packaging reliability
Design-in-reliability (products, circuits, systems, processes)
Reliability of advanced automotive circuits, systems, products
Customer/manufacturer product reliability requirements
Wafer-level reliability tests for monitoring and qualification
Sponsors
Patrons
