Reliability Experts Forum

Dr. Alessandro Grossi 

Emerging Memory Reliability Panel

Dr. Alessandro Grossi received M.Sc. and Ph.D. degrees in electronic engineering from Università degli Studi di Ferrara in 2013 and 2017. During his Ph.D. has been involved in R&D activities on several NVM technologies, such as NAND Flash, MRAM and RRAM. He was visiting researcher at IHP in 2015 and CEA-LETI in 2016 working on RRAM and MRAM. In 2017, he joined CEA-LETI as researcher working with Stanford University on RRAM-based TCAM. He joined Infineon in 2018, where his R&D activities currently focus on embedded NVM characterization and validation for automotive microcontrollers. He authored/co-authored 30+ publications on NVM characterization, physics, modeling, and reliability.

Prof. Biswajit Ray

Emerging Memory Reliability Panel

Biswajit Ray is an Associate Professor of Electrical and Computer Engineering at Colorado State University, where he leads the Reliable and Assured Microelectronics (RAM) Laboratory. Dr. Ray earned his Ph.D. from Purdue University in West Lafayette, IN, and subsequently worked at SanDisk Corporation in Milpitas, California, contributing to the development of 3D NAND Flash memory technology. Dr. Ray’s research interests encompass electronic devices and systems, with a specific focus on enhancing the security, reliability, non-volatility, and energy efficiency of solid-state storage systems. He holds 40 U.S. issued patents and has authored over 90 research papers published in international journals and conferences. Prof. Ray is the recipient of the NSF CAREER Award (2022), the Best Poster Award at IEEE PAINE (2022) and NSF EPSCoR Research Fellowship (2020).